Electronic device having liquid crystal display device

ABSTRACT

A display device of the present invention includes a thin film transistor in a pixel region formed over a substrate, the thin film transistor including an active layer and a gate electrode with a gate insulating film interposed between the active layer and the gate electrode, a silicon nitride film formed over the thin film transistor, a resin film formed over the silicon nitride film, an inorganic insulating film formed over the resin film; a metal layer formed over the substrate; and a sealing material formed over the metal layer, wherein the sealing material covers a region where the resin film is not formed over the silicon nitride film.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation (and claims the benefit of priorityunder 35 USC 120) of U.S. application Ser. No. 11/538,899, filed Oct. 5,2006, now allowed, which is a divisional of U.S. application Ser. No.10/752,526, filed Jan. 8, 2004, now U.S. Pat. No. 7,215,402, which is acontinuation of U.S. application Ser. No. 10/458,648, filed Jun. 9,2003, now U.S. Pat. No. 7,333,160, which is a continuation of U.S.application Ser. No. 10/143,331, filed on May 9, 2002, now U.S. Pat. No.6,577,372, which is a continuation of U.S. application Ser. No.09/912,092, filed on Jul. 23, 2001, now U.S. Pat. No. 6,404,479, whichis a continuation of U.S. application Ser. No. 08/879,583, filed on Jun.20, 1997, now U.S. Pat. No. 6,288,764, which claims the benefit offoreign priority applications filed in Japan as Serial No. 08-185635 onJun. 25, 1996, as Serial No. 08-232608 on Aug. 13, 1996 and as SerialNo. 08-277485 on Sep. 27, 1996, all of which are incorporated byreference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a configuration of an active matrixtype liquid crystal display integrated with a peripheral drivingcircuit.

2. Description of Related Art

Active matrix type liquid crystal displays have been known. They have aconfiguration in which an active matrix circuit and a peripheral drivingcircuit for driving the same circuit are integrated on a glass substrateor quartz substrate.

In such a liquid crystal panel integrated with a peripheral drivingcircuit, a thin film semiconductor that forms thin film transistorsprovided in the peripheral driving circuit must be a crystalline siliconthin film. The reason for this is that the peripheral driving circuitmust operate at a high speed.

Reliability is an important consideration for a liquid crystal panelintegrated with a peripheral driving circuit as described above.Specifically, what is important for such a device is the stability ofimage display in relation to the environment where it is used.

Especially, a crystalline silicon film has a problem in that it issignificantly susceptible to the variation of characteristics with timeand the influence of the environment where it is used because of thehigh level of characteristics of itself.

Specifically, a problem arises in that it is affected by stressesexerted thereon during the fabrication and handling of a liquid crystalpanel and by moisture that permeates into the liquid crystal panel.

Further, a liquid crystal panel integrated with a peripheral drivingcircuit is designed in an intention to minimize the surface area ofregions unnecessary for screen display. For example, efforts are put inminimizing the surface area occupied by the peripheral driving circuit.

Meanwhile, in a liquid crystal display, an encapsulating material forenclosing liquid crystal, referred to as “sealing material” is provideda peripheral portion to hold liquid crystal between a pair ofsubstrates.

As an effort to minimize the surface area of regions unnecessary forscreen display as described above, the surface area occupied by thesealing material must be also reduced. A configuration for this purposeis known in which a sealing material is provided on a peripheral drivingcircuit to minimize the surface area excluding pixels (referred to as“frame”).

In the case of an active matrix type liquid crystal display integratedwith a peripheral driving circuit, faults that occur in the peripheraldriving circuit can be a problem.

Especially, the configuration in which a sealing material is provided ona peripheral driving circuit to minimize the surface area excludingpixels (referred to as “frame”) is subjected to more faults at theperipheral driving circuit.

This problem occurs due to the following reasons. A sealing materialincludes a kind of spacer referred to as “filler” for maintaining a gapbetween substrates.

In general, a peripheral driving circuit is at a high level ofintegration. As a result, thin film transistors and wiring lines locateddirectly under such fillers are subjected to a pressure from the fillers(it is assumed that this pressure can be locally quite high) and arehence vulnerable to line breakage and poor contact.

Meanwhile, a spherical substrate gap maintaining means referred to as“spacer” is used also in an active matrix region. However, since anactive matrix region is at a lower level of integration, faultsattributable to the presence of a spacer are not as problematic as in aperipheral driving circuit.

It is an object of the invention disclosed in this specification toprovide a configuration for an active matrix type liquid crystal displayincorporating a peripheral driving circuit, in which the surface areaexcluding the region of a pixel matrix circuit is minimized.

On the basis of the above-described configuration, it is another objectof the invention to provide a configuration that prevents breakage ofthin film transistors provided on a peripheral driving circuit due to apressure exerted by a sealing material.

It is still another object of the invention to provide a configurationfor an active matrix type liquid crystal display incorporating aperipheral driving circuit, which prevents thin film transistors frombeing adversely affected by a stress exerted thereon during thefabrication and handling of the liquid crystal panel and which preventsmoisture from permeating into the liquid crystal panel.

SUMMARY OF THE INVENTION

In order to solve the above-described problems, as a mode of carryingout the invention disclosed in this specification, there is provided anactive matrix type liquid crystal display integrated with a peripheraldriving circuit as shown in FIG. 1 having a configuration in which:

a sealing material 104 is provided on the peripheral driving circuit;and

-   -   resin layers 237 and 240 are provided between the peripheral        driving circuit and the sealing material.

The above-described configuration makes it possible to prevent a highpressure from being locally applied to the peripheral driving circuit bya filler 103 included in the sealing material 104, thereby preventingthe breakage of the peripheral driving circuit.

Further, by providing the sealing material on the peripheral drivingcircuit, a configuration can be obtained in which the surface areaexcluding the pixel region is minimized.

In the above-described configuration, each of the resin layers arepreferably formed as multilayered form. This is effective in moderatingthe pressure exerted thereon by the filler in the sealing material.

Further, it is advantageous to form an auxiliary capacitor in the activematrix region using the resin layers. This makes it possible to providea capacitor having a required value in a pixel.

The thickness of the resin layers is preferably equal to greater thanone-half of the diameter of a filler in the sealing material. This is acondition advantageous in preventing the pressure of a filler in thesealing material from being exerted on the peripheral driving circuiteven if the filler sinks into the resin layers. Further, in order tomoderate a pressure exerted on the peripheral driving circuit, a highlyelastic material such as polyimide may be chosen for the resin layers.When the resin layers are formed as a multilayered form, it will besufficient if the collective thickness is equal to or greater thanone-half of the diameter of a filler in the sealing material.

In order to solve the above-described problems, as specificallyillustrated in FIG. 6, there is provided a configuration in which aliquid crystal material 314 is sandwiched and held between a pair ofglass substrates 301 and 318, characterized in that:

an active matrix circuit (constituted by a thin film transistorindicated by 302) and a peripheral driving circuit (constituted by athin film transistor indicated by 303) are provided on the surface ofone of the substrates 301;

a resin material is provided on the peripheral driving circuit asinterlayer insulating films 306, 309, and 311;

the liquid crystal material 314 is sealed with a sealing material 315;

the resin material and the sealing material partially overlap with eachother; and

the resin material is blocked from the outside by the sealing material.

In the context of the present invention, the term “a surface of asubstrate” means a surface of a glass or quartz substrate and further asurface of a glass or quartz substrate having a silicon oxide film or asilicon nitride film (so-called inorganic film) formed thereon.

The use of the above-described configuration makes it possible tomoderate a stress exerted on the peripheral driving circuit and toenhance sealing capability in the region indicated by 300 in FIG. 6.

Especially, a high degree of adhesion can be achieved in the regionindicated by 300 in FIG. 6 where the sealing material 315 is in contactwith a silicon nitride film 305 which is an inorganic substance(inorganic film) except the region of wiring line 308. This makes itpossible to achieve a high degree of adhesion in this region, therebypreventing external moisture from permeating.

In order to moderate a stress, the interlayer insulating films arepreferably formed from polyimide resin. The sealing material ispreferably formed from epoxy resin to enhance the sealing actionfurther.

The interlayer insulating films can be formed without using polyimideresin.

For example, acrylic resin is also used to form the interlayerinsulating film.

The active matrix type liquid crystal displays integrated with aperipheral circuit shown in FIGS. 1 and 6 are used for display devicesof photographic apparatuses such as portable video movie apparatuses,portable personal computers, and various information terminals.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a partial sectional view of an active matrix type liquidcrystal display which utilizes the present invention.

FIGS. 2A through 2E illustrate fabrication steps to provide theconfiguration shown in FIG. 1.

FIGS. 3A through 3D illustrate fabrication steps to provide theconfiguration shown in FIG. 1.

FIG. 4 illustrates a fabrication step to provide the configuration shownin FIG. 1.

FIG. 5 is a partial sectional view of another active matrix type liquidcrystal display which utilizes the present invention.

FIG. 6 is a partial sectional view of a liquid crystal panel whichutilizes the present invention.

FIG. 7 is a partial sectional view of a liquid crystal panel whichutilizes the present invention.

FIG. 8 is a partial sectional view of a liquid crystal panel whichutilizes the present invention.

FIG. 9 is a partial sectional view of a liquid crystal panel whichutilizes the present invention.

FIG. 10 is a partial sectional view of a liquid crystal panel whichutilizes the present invention.

FIGS. 11A through 11F are views schematically showing apparatuses whichutilize the present invention.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

A first embodiment of the present invention will now be described.

The present embodiment employs a configuration in which a sealingmaterial is provided on a region where a peripheral driving circuit islocated. Further, in order to prevent damage to the peripheral drivingcircuit caused by a stress exerted by a filler included in the sealingmaterial, a configuration is employed in which a buffer layer made ofpolyimide is provided on the peripheral driving circuit.

FIG. 1 is a partial sectional view of an active matrix type liquidcrystal display according to the present embodiment. FIG. 1 shows aconfiguration referred to as “peripheral driving circuit integratedtype” having a structure in which a peripheral driving circuit 100 andan active matrix circuit 200 are integrated on the same substrate.

In the configuration shown in FIG. 1, a sealing portion indicated by 104is provided over the peripheral driving circuit 100. This sealingportion has a sealing function to prevent liquid crystal filled in aspace 105 (a gap between the substrates) from leaking out.

The sealing portion 104 is formed from a resin material. The sealingportion 104 is formed by applying the resin material with a spinner,patterning it, and further baking it. Alternatively, it is formed usinga printing process.

103 designates a filler which is required for maintaining an intervalbetween the substrates. This filler is made of a resin material and hasa cylindrical configuration. In the present embodiment, the resinmaterial used for forming the sealing material 104 includes the filler103 which is mixed therein in advance.

Resin layers 237 and 240 are provided under the sealing material 104.The resin layers are used as interlayer insulating films and dielectricsfor an auxiliary capacitor. The resin layers have a function ofmoderating a pressure exerted on the peripheral driving circuit 100 bythe filler in the sealing material in the region of the peripheraldriving circuit 100.

FIGS. 2A through 2E, FIGS. 3A through 3D, and FIG. 4 illustratefabrication steps to provide the configuration shown in FIG. 1. Thefabrication steps described below relate to a configuration in which ann-channel type thin film transistor and a p-channel type thin filmtransistor are provided in a peripheral driving circuit and in which ap-channel type thin film transistor is provided in an active matrixcircuit.

More particularly, in this configuration, a low concentration impurityregion is provided in the n-channel type thin film transistor, and ahigh concentration impurity region is provided between a source/drainregion and a channel formation region of the p-channel type thin filmtransistor.

Such a configuration makes it possible to suppress deterioration of thecharacteristics of the n-channel type thin film transistor of theperipheral driving circuit. Further, the active matrix circuit can beconfigured to achieve a low OFF current value and less variation of anON current value.

FIGS. 2A through 2E, FIGS. 3A through 3D, and FIG. 4 illustratefabrication steps. FIGS. 2A through 2E illustrate steps for fabricatingthe n-channel type thin film transistor (and the region around the same)provided in the peripheral driving circuit on the left side thereof.They illustrate steps for fabricating the thin film transistor (and theregion around the same) provided in the active matrix region on theright side thereof.

First, as shown in FIG. 2A, a backing film (not shown) is formed on aglass substrate 201. A silicon oxide film is used as the backing film.This backing film has a function of preventing diffusion of impuritiesfrom the glass substrate 201 and moderating a stress to the glasssubstrate.

Next, an amorphous silicon film (not shown) is formed on the backingfilm to a thickness of 500 Å using a plasma CVD process. Further, theamorphous silicon film is irradiated with laser beams to be crystallizedinto a crystalline silicon film. The crystalline silicon film may beobtained using a heating process or irradiation with intense beams.

This crystalline silicon film is patterned to form active layersindicated by 202 and 203 of thin film transistors. 202 designates anactive layer of the n-channel type thin film transistor provided in theperipheral driving circuit 100. 203 designates an active layer of thep-channel type thin film transistor provided in the active matrixcircuit 200.

Although only two thin film transistors are shown in the figures, tensof thousands to hundreds of thousands (or more) of thin film transistorsare integrated in an actual configuration.

After forming the active layers, a plasma CVD process is performed toform a silicon oxide film having a thickness of 1000 Å as a gateinsulating film 204. Thus, the state shown in FIG. 2A is achieved.

In the state shown in FIG. 2A, an aluminum film (not shown) is formed bya sputtering process to a thickness of 4000 Å in order to configure gateelectrodes (and gate lines). This aluminum film includes 0.1% by weightof scandium.

Next, an anodic oxidation film (not shown) having dense film quality isformed to a thickness of 100 Å. This anodic oxidation is carried outusing an ethylene glycol solution including 3% of tartaric acid as theelectrolyte. This solution is used after being neutralized with aqueousammonia.

The anodic oxidation film has a function of enhancing the adhesion ofresist masks to be provided later. A silicon nitride film or a metalfilm may be used instead of the anodic oxidation film. Alternatively, analuminum oxide film may be formed by means of plasma oxidization in anoxidizing atmosphere.

Next, the aluminum film is patterned using resist masks 205 and 206.This step forms aluminum patterns indicated by 207 and 208 which serveas bases for the gate electrodes. Thus, the state shown in FIG. 2B isachieved.

In the state shown in FIG. 2B, anodic oxidation is performed using thealuminum patterns 207 and 208 as anodes. This step forms porous anodicoxides (it is not appropriate to express them as “films”) indicated by211 and 212. The anodic oxides are grown a distance of 5000 Å.

This anodic oxidation is carried out using an aqueous solution including3% of oxalic acid as the electrolyte.

At this step, the presence of the resist masks 205 and 206 causes theanodic oxidation to selectively proceed on side surfaces of the aluminumpatterns 207 and 208. The reason is that the presence of the resistmasks 205 and 206 prevents the electrolyte from contacting the uppersurfaces of the aluminum patterns 207 and 208. The patterns indicated by209 and 210 here will become gate electrodes later. Thus, the stateshown in FIG. 2C is achieved.

Next, the resist masks 205 and 206 are removed. Then, anodic oxidationfilms having dense film quality are formed. This anodic oxidation isperformed using an ethylene glycol solution including 3% of tartaricacid and neutralized with aqueous ammonia as the electrolyte.

At this step, the electrolyte penetrates the porous anodic oxide films211 and 212. Therefore, dense anodic oxidation films indicated by 213and 214 are formed.

This step defines gate electrodes 209 and 210. The surfaces of theseelectrodes are covered by the dense anodic oxidation films 213 and 214.These electrodes and wiring lines extending therefrom serve as wiringlines for a first layer. Thus, the state shown in FIG. 2D is achieved.

Next, the implantation of P (phosphorus) ions is carried out on theentire surface. At this step, P ions are implanted at a relatively highconcentration in order to form source and drain regions (FIG. 2E).

At this step, P ions are implanted in regions 215, 217, 218, and 220. Pions are not implanted in regions 216 and 219.

Then, the porous anodic oxide films 211 and 212 are removed. Thus, thestate shown in FIG. 3A is achieved. In this state, P ions are implantedagain. At this step, P ions are implanted in a dose less than that inthe doping condition shown in FIG. 2E.

Thus, the regions indicated by 221, 222, 223, and 224 are formed as lowconcentration impurity regions, and a channel formation region 225 ofthe n-channel type transistor is defined (FIG. 3A).

Next, the region where the n-channel type thin film transistor is to beformed is covered with a resist mask 226, and B ions are implanted insuch a state. This step is performed on a condition that the regionsindicated by 227 and 228 become the source and drain regions of thep-channel type thin film transistor.

At this step, the regions indicated by 227 and 228 become the source anddrain regions. Further, the regions indicated by 229 and 230 are formedas regions which exhibit stronger p-type properties than those in theregions indicated by 227 and 228.

This is because the concentration of P elements included in the regions229 and 230 is lower than that in the regions 227 and 228.

Specifically, more B elements are required in the regions 227 and 228 toneutralize P elements and, as a result, the regions 229 and 230 exhibitstronger p-type properties. Further, the region indicated by 231 isdefined as the channel formation region of the p-channel type thin filmtransistor.

When the implantation of impurity ions is complete, the resist mask 226is removed. Then, laser irradiation is performed to activate theimplanted impurities and to anneal damage on the semiconductor filmscaused by the impact of the ions.

Next, a first interlayer insulating film 232 is formed. A siliconnitride film having a thickness of 4000 Å is formed here as theinterlayer insulating film 232 using a plasma CVD process.

Then, contact holes are formed to form wiring lines (electrodes) 233through 236 in a second layer. Thus, the state shown in FIG. 3C isachieved.

Next, a second interlayer insulating film 237 is formed. A resin filmhaving a thickness of 15000 Å is formed here as the interlayerinsulating film 237. It is formed using a spin coating process.

Next, a contact hole is formed to form a wiring line (electrode) 238 ina third layer. At the same time, a light shield film 239 for shading thethin film transistor provided in the active matrix circuit 200 isformed. This light shield film 239 forms an auxiliary capacitor incooperation with a pixel electrode which is opposite thereto across ainterlayer insulating film (resin film) to be formed later. Thus, thestate shown in FIG. 3D is achieved.

Next, a third interlayer insulating film 240 is formed as shown in FIG.4. A resin layer having a thickness of 5000 Å is formed here as thethird interlayer insulating film 240 using a spin coating process. Then,a contact hole is formed to form a pixel electrode 241 using ITO.

In the present embodiment, an auxiliary capacitor is formed by the lightshield film 239 and the pixel electrode which are provided so as tosandwich the third interlayer insulating film (resin film) 301.

Further, a rubbing film 242 is formed. The rubbing film 242 is made ofresin and is formed using a printing process. In the present embodiment,the rubbing film is formed only in the region of the active matrixcircuit. A rubbing process is carried out after the rubbing film 242 isformed.

Then, an opposite substrate 108 is provided as shown in FIG. 1. Anopposite electrode 107 and a rubbing film 106 are formed on the oppositesubstrate 108. The opposite substrate 108 and the substrate shown inFIG. 4 is put together to complete the configuration shown in FIG. 1.

A second embodiment of the present invention will now be described.

The present embodiment is an example in which bottom-gate type thin filmtransistors are used in a liquid crystal display integrated with aperipheral driving circuit.

FIG. 5 is a sectional view corresponding to FIG. 1. The presentembodiment is different from the configuration shown in FIG. 1 in thestructure of the thin film transistors. The configuration is otherwisesimilar to that shown in FIG. 1.

A third embodiment of the present invention will now be described.

FIG. 6 schematically shows the configuration of the present embodiment.FIG. 6 is a schematic sectional view of an active matrix type liquidcrystal display integrated with a peripheral driving circuit.

In FIG. 6, 301 and 318 designate a pair of glass substrates thatconstitute a liquid crystal panel. A liquid crystal material, an activematrix circuit, and a peripheral driving circuit for driving the activematrix circuit are provided in a gap between the pair of glasssubstrates.

302 designates a thin film transistor provided in the active matrixcircuit portion. Although only one thin film transistor is provided inFIG. 6, in practice, thin film transistors are provided in a quantity atleast equal to the number of pixels.

303 designates a thin film transistor provided in the peripheral drivingcircuit. Although only one thin film transistor 303 is provided in FIG.6, in practice, a combination of p-channel type and n-channel type thinfilm transistors is provided in quantities required for forming a shiftregister circuit and a buffer circuit.

304 designates a interlayer insulating film. The gate insulating film304 is constituted by a silicon oxide film. 305 designates a siliconnitride film that constitutes a first interlayer insulating film. 306designates a resin interlayer film made of polyimide that constitutesthe first interlayer insulating film in combination with the siliconnitride film 305. The resin interlayer film 306 made of polyimide ischaracterized in that its surface can be flattened.

307 designates a line which extends from the drain of the thin filmtransistor 303 provided in the peripheral driving circuit and which isconnected to the source of the thin film transistor 302 provided in thepixel matrix circuit.

308 designates a line connected to the source of the thin filmtransistor 303 provided in the peripheral driving circuit. This line 308constitutes an external terminal of the liquid crystal panel.

309 designates a resin interlayer film made of polyimide thatconstitutes a second interlayer insulating film. 310 designates a lightshield film made of titanium formed on the resin interlayer film 309that constitutes the second interlayer insulating film. This lightshield film 310 is provided to prevent the thin film transistor 302 frombeing irradiated with light.

311 designates a resin interlayer film made of polyimide thatconstitutes a third interlayer insulating film. 312 designates an ITOfilm that constitutes a pixel electrode. The ITO film 312 and the lightshield film 310 form an auxiliary capacitor through the resin interlayerfilm 311. Such a configuration makes it possible to obtain a requiredauxiliary capacitor without reducing the aperture ratio.

The resin interlayer films 306, 309 and 311 can be formed without usingpolyimide resin. For example, acrylic resin is also used to form theinterlayer insulating film.

313 designates an orientation film made of polyimide. This orientationfilm 313 exerts an orientation regulating force on liquid crystal 314which is in contact therewith.

315 designates epoxy resin for sealing the liquid crystal material. Theliquid crystal material 314 is held between the pair of glass substrates318 and 301 by the epoxy resin 315.

The epoxy resin 315 includes glass fibers referred to as “filler” formaintaining the gap for the liquid crystal layer.

316 designates an orientation film made of polyimide provided on theopposite substrate (the substrate 318 is referred to as “oppositesubstrate”). 317 designates an opposite electrode.

The present embodiment is characterized in that the resin films 311,309, and 306 that constitute interlayer films overlap the epoxy resin315 that constitutes a sealing material in regions except a part of theepoxy resin 315.

This makes it possible to moderate a stress using the resin interlayerfilms made of polyimide and to prevent moisture from permeating from theoutside of the panel using the epoxy resin that constitutes a sealingmaterial.

The resin films indicated by 311, 309, and 306 are elastic and have afunction of moderating a stress exerted externally.

However, they substantially have no function as a barrier to prevent thepenetration of moisture because they absorb moisture.

On the other hand, the epoxy resin 315 that constitutes a sealingmaterial is rigid and substantially has no function of moderating astress, but it has a sufficient function of blocking moisture.

The use of the configuration disclosed in the present embodiment allowsthe effects of both of those components to be demonstrated.

Especially, the degree of sealing can be improved where the epoxy resinfilm and the polyimide resin film do not overlap each other at the part.Specifically, since epoxy resin and polyimide exhibit poor adhesion toeach other, the arrangement to prevent them from overlapping each otherat the part indicated by 300 makes it possible to enhance a sealingeffect provided by epoxy resin in such a part.

It is thus possible to provide a function of sealing liquid crystal inthe cell at the part indicated by 300 and to obtain a configuration thatprevents impurities and dusts from entering the liquid crystal layerfrom the outside.

FIG. 7 is a sectional view of a region where the wiring line 308 is notpresent. As apparent from FIG. 7, in the region indicated by 350, a highdegree of adhesion can be achieved between the sealing material 315 andthe silicon nitride film 305 because they are in direct contact witheach other.

The inventors understand that a quite high degree of adhesion can beachieved between epoxy resin and an inorganic material. It is thereforequite advantageous to enhance the sealing of the liquid crystal cell atthe region indicated by 350 in FIG. 7.

Further, the structure of the thin film transistor is not limited to thetop-gate type as in the present embodiment but may be a invertedstaggered type as in the second embodiment.

A fourth embodiment of the present invention will now be described.

The present embodiment relates to an improvement on the configurationaccording to the third embodiment. Sealing may not be maintained in theregion indicated by 300 in FIG. 6 because of a step which is a result ofthe presence of the wiring line 308.

The present embodiment is a device for solving this problem. FIG. 8shows a section of the region 308 in FIG. 8 as viewed from theright-hand side of FIG. 6. The reference numbers in FIG. 8 which are thesame as those in FIGS. 6 and 7 designate the same locations.

In the present embodiment, a silicon oxide film 400 is formed byapplying a solution after forming the wiring line 308. Such a siliconoxide film has already been put in actual use as a final passivationfilm or flat film of an integrated circuit.

FIG. 9 shows a section as viewed from the right-hand side of FIG. 8.Since a silicon oxide film 400 is formed by applying a solution, a stepas indicated by 401 can be filled. This makes it possible to improve theadhesion of the sealing material formed thereon to achieve a preferablesealing function.

As apparent from FIG. 9, it is necessary to remove the silicon oxidefilm 400 above the end of the line 308 to maintain contact with theoutside. FIG. 9 may be regarded as corresponding to FIG. 6.

A fifth embodiment of the present invention will now be described.

The present embodiment relates to a configuration for preventing thebreakage and poor conductivity at the line 308 as a result of theapplication of a stress from the sealing material 315 at the end of thesealing material indicated by 300 in FIG. 6.

The wiring line 308 may be subjected to a stress from the sealingmaterial 315 depending on the type of the epoxy resin that forms thesealing material 315 and hardening conditions for the same, and defectsmay occasionally occur in the wiring line 308.

Under such circumstances, according to the present embodiment, thewiring line 308 is patterned as shown in FIG. 10 under the sealingmaterial 315.

This makes it possible to prevent the occurrence of defects at thewiring pattern 308 as a result of the application of a stress from thesealing material 315.

In addition, it is possible to suppress the reduction of sealingproperties at side surfaces of the pattern of the wiring line 308 asshown in the fourth embodiment.

A sixth embodiment of the present invention will now be described.

The present embodiment shows examples of apparatuses having liquidcrystal panels as described in the first through fifth embodiments.Configurations as shown in FIGS. 11A through 11F can be used on liquidcrystal panels included in such apparatuses. FIG. 11A shows a portableinformation processing terminal. This apparatus includes a main body2001 having a display device 2003 utilizing a liquid crystal panel,operation buttons 2004, and a CCD camera 2002. This apparatus has aconfiguration which allows information to be obtained and transmittedover a telephone network.

As the liquid crystal panel used for the display device, a transmissiontype or reflection type panel may be used. A reflection type panel isadvantageous if power consumption is to be reduced.

FIG. 11B shows an apparatus referred to as “head mount display” which isput on the head of a user and displays images just in front of the eyes,thereby performing a function of displaying images as if they were realscenes in front of the user. This apparatus includes a liquid crystaldisplay 2102 at a display device portion and has a structure such that amain body 2101 is secured to the head of the user with a band 2103.

As the liquid crystal panel, a transmission type or reflection typepanel may be used.

FIG. 11C shows a so-called car navigation system having a main body 2201on which a display device 2202 utilizing a liquid crystal panel andoperation buttons 2203 are provided and has a function of receivingwaves from broadcast satellites by an antenna 2204.

As the liquid crystal panel, a transmission type or reflection typepanel may be used.

FIG. 11D shows a portable telephone having a main body 2301 on which adisplay device 2304 utilizing a liquid crystal display, an audio inputportion 2303, an audio output portion 2302, operation buttons 2305, andan antenna 2306 are provided.

FIG. 11E shows a video camera having a main body 2401 on which operationbuttons 2404, a display device 2402 constituted by a liquid crystaldisplay, an eyepiece 2403 for viewing images displayed on the displaydevice 2402, and a tape holder 2405 for containing a magnetic tape forstoring photographed images are provided.

As the liquid crystal panel forming the display device 2402, atransmission type panel is normally used which forms images bymodulating light from a back-light device.

FIG. 11F shows a projection type projector in which a display device2503 for optically modulating light from a light source is provided at amain body 2501 thereof. The display device 2503 shown in FIG. 11F is adevice constituted by a reflection type liquid crystal panel.

An image which has been optically modulated by the display device ismagnified by an optical system 2504 and is projected on a screen 2505.An image is viewed from the side of the main body as an image projectedon the screen 2505.

The use of the invention disclosed in this specification makes itpossible to provide a configuration of an active matrix type liquidcrystal display integrated with a peripheral driving circuit in whichthe surface area excluding the region of a pixel matrix circuit isminimized.

Specifically, by employing a configuration in which a sealing materialis provided on a peripheral driving circuit, the surface area excludinga pixel region can be minimized. Such a configuration further makes itpossible to prevent damage to the peripheral driving circuit due to apressure exerted by the sealing material.

The use of the invention disclosed in this specification makes itpossible to prevent moisture from permeating into a thin film transistorcircuit and to prevent a stress exerted on a liquid crystal panel fromadversely affecting thin film transistors.

Specifically, a configuration can be obtained which prevents thin filmtransistors from being adversely affected by a stress exerted thereonduring the fabrication and handling of s liquid crystal panel andprevents moisture from permeating into the liquid crystal panel.

It should be understood that the foregoing description is onlyillustrative of the invention. Various alternatives and modificationscan be devised by those skilled in the art without departing from theinvention. Accordingly, the present invention is intended to embrace allsuch alternatives, modifications and variances which fall within thescope of the appended claims.

1. A display device comprising: a first substrate and a second substrateopposed to each other; a liquid crystal between the first substrate andthe second substrate; an active matrix circuit and a driving circuit,each comprising a thin film transistor over the first substrate, whereinthe thin film transistor includes an active layer and a gate electrodewith a gate insulating film therebetween; a resin layer over the thinfilm transistor of the active matrix circuit and the thin filmtransistor of the driving circuit; a pixel electrode over the resinlayer; a spacer over the pixel electrode; a sealing material overlappingthe driving circuit; and a filler included in the sealing material,wherein the filler overlaps the thin film transistor of the drivingcircuit.
 2. A display device according to claim 1, wherein the fillerhas a cylindrical configuration.
 3. A display device according to claim1, wherein the filler comprises a resin material.
 4. A display deviceaccording to claim 1, wherein the spacer has a spherical shape.
 5. Adisplay device according to claim 1, wherein the resin layer is astacked-layer of plurality of resin layers.
 6. A display deviceaccording to claim 1, wherein the resin layer comprises polyimide.
 7. Adisplay device according to claim 1, further comprising a rubbing filmformed over the resin layer and in contact with the spacer.
 8. A displaydevice according to claim 1, wherein the active layer of the thin filmtransistor in the driving circuit includes crystalline silicon.
 9. Adisplay device according to claim 1, wherein the display device isincorporated in one selected from the group consisting of a portableinformation processing terminal, a head mount display, a navigationsystem, a portable telephone, a camera, and a projector.
 10. A displaydevice comprising: a first substrate and a second substrate opposed toeach other; a liquid crystal between the first substrate and the secondsubstrate; an active matrix circuit and a driving circuit, eachcomprising a thin film transistor over the first substrate, wherein thethin film transistor includes an active layer and a gate electrode witha gate insulating film therebetween; a resin layer over the thin filmtransistor of the active matrix circuit and the thin film transistor ofthe driving circuit; a pixel electrode over the resin layer; a spacerover the pixel electrode; a sealing material overlapping the drivingcircuit; and a filler included in the sealing material, wherein thefiller overlaps the thin film transistor of the driving circuit, andwherein a height of the filler is larger than a height of the spacer.11. A display device according to claim 10, wherein the filler has acylindrical configuration.
 12. A display device according to claim 10,wherein the filler comprises a resin material.
 13. A display deviceaccording to claim 10, wherein the spacer has a spherical shape.
 14. Adisplay device according to claim 10, wherein the resin layer is astacked-layer of plurality of resin layers.
 15. A display deviceaccording to claim 10, wherein the resin layer comprises polyimide. 16.A display device according to claim 10, further comprising a rubbingfilm formed over the resin layer and in contact with the spacer.
 17. Adisplay device according to claim 10, wherein the active layer of thethin film transistor in the driving circuit includes crystallinesilicon.
 18. A display device according to claim 10, wherein the displaydevice is incorporated in one selected from the group consisting of aportable information processing terminal, a head mount display, anavigation system, a portable telephone, a camera, and a projector. 19.A display device comprising: a first substrate and a second substrateopposed to each other; a liquid crystal between the first substrate andthe second substrate; an active matrix circuit and a driving circuit,each comprising a thin film transistor over the first substrate, whereinthe thin film transistor includes an active layer and a gate electrodewith a gate insulating film therebetween; a resin layer over the thinfilm transistor of the active matrix circuit and the thin filmtransistor of the driving circuit; a pixel electrode over the resinlayer; a spacer over the pixel electrode; a sealing material overlappingthe driving circuit; and a filler included in the sealing material,wherein the filler is in contact with the resin layer, and wherein thefiller overlaps the thin film transistor of the driving circuit.
 20. Adisplay device according to claim 19, wherein the filler has acylindrical configuration.
 21. A display device according to claim 19,wherein the filler comprises a resin material.
 22. A display deviceaccording to claim 19, wherein the spacer has a spherical shape.
 23. Adisplay device according to claim 19, wherein the resin layer is astacked-layer of plurality of resin layers.
 24. A display deviceaccording to claim 19, wherein the resin layer comprises polyimide. 25.A display device according to claim 19, further comprising a rubbingfilm formed over the resin layer and in contact with the spacer.
 26. Adisplay device according to claim 19, wherein the active layer of thethin film transistor in the driving circuit includes crystallinesilicon.
 27. A display device according to claim 19, wherein the displaydevice is incorporated in one selected from the group consisting of aportable information processing terminal, a head mount display, anavigation system, a portable telephone, a camera, and a projector. 28.A display device comprising: a first substrate and a second substrateopposed to each other; a liquid crystal between the first substrate andthe second substrate; an active matrix circuit and a driving circuit,each comprising a thin film transistor over the first substrate, whereinthe thin film transistor includes an active layer and a gate electrodewith a gate insulating film therebetween; a resin layer over the thinfilm transistor of the active matrix circuit and the thin filmtransistor of the driving circuit; a pixel electrode over the resinlayer; a spacer over the pixel electrode; a sealing material overlappingthe driving circuit; and a filler included in the sealing material,wherein the filler overlaps the thin film transistor of the drivingcircuit, and wherein the resin layer has a thickness equal to or greaterthan one-half of a diameter of the filler.
 29. A display deviceaccording to claim 28, wherein the filler has a cylindricalconfiguration.
 30. A display device according to claim 28, wherein thefiller comprises a resin material.
 31. A display device according toclaim 28, wherein the spacer has a spherical shape.
 32. A display deviceaccording to claim 28, wherein the resin layer is a stacked-layer ofplurality of resin layers.
 33. A display device according to claim 28,wherein the resin layer comprises polyimide.
 34. A display deviceaccording to claim 28, further comprising a rubbing film formed over theresin layer and in contact with the spacer.
 35. A display deviceaccording to claim 28, wherein the active layer of the thin filmtransistor in the driving circuit includes crystalline silicon.
 36. Adisplay device according to claim 28, wherein the display device isincorporated in one selected from the group consisting of a portableinformation processing terminal, a head mount display, a navigationsystem, a portable telephone, a camera, and a projector.
 37. A displaydevice comprising: a first substrate and a second substrate opposed toeach other; a liquid crystal between the first substrate and the secondsubstrate; an active matrix circuit and a driving circuit, eachcomprising a thin film transistor over the first substrate, wherein thethin film transistor includes an active layer and a gate electrode witha gate insulating film therebetween; a resin layer over the thin filmtransistor of the active matrix circuit and the thin film transistor ofthe driving circuit; a pixel electrode over the resin layer; a spacerover the pixel electrode; a sealing material overlapping the drivingcircuit; and a filler included in the sealing material, wherein thefiller overlaps the thin film transistor of the driving circuit, whereina height from a surface of the first substrate to a bottom of thesealing material where the filler does not exist is substantially sameas a height from a surface of the first substrate to a bottom of thefiller.
 38. A display device according to claim 37, wherein the fillerhas a cylindrical configuration.
 39. A display device according to claim37, wherein the filler comprises a resin material.
 40. A display deviceaccording to claim 37, wherein the spacer has a spherical shape.
 41. Adisplay device according to claim 37, wherein the resin layer is astacked-layer of plurality of resin layers.
 42. A display deviceaccording to claim 37, wherein the resin layer comprises polyimide. 43.A display device according to claim 37, further comprising a rubbingfilm formed over the resin layer and in contact with the spacer.
 44. Adisplay device according to claim 37, wherein the active layer of thethin film transistor in the driving circuit includes crystallinesilicon.
 45. A display device according to claim 37, wherein the displaydevice is incorporated in one selected from the group consisting of aportable information processing terminal, a head mount display, anavigation system, a portable telephone, a camera, and a projector.